Semiconductor device having a gate electrode formed on a...

Details Semiconductor device having a gate electrode formed on a... Semiconductor device having a gate electrode formed on a...

2005-12-27

2005-12-27

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S326000, C438S257000, C438S287000, C438S652000, C438S981000

Reexamination Certificate

active

06979858

ABSTRACT:
A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

REFERENCES:
patent: 5498556 (1996-03-01), Hong et al.
patent: 5966606 (1999-10-01), Ono
patent: 6288419 (2001-09-01), Prall et al.
patent: 6355522 (2002-03-01), Chang et al.
patent: 6624023 (2003-09-01), Han et al.
patent: 09-307106 (1997-11-01), None
patent: 11-163317 (1999-06-01), None

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