Semiconductor device having a gallium and nitrogen containing ba

Details Semiconductor device having a gallium and nitrogen containing ba Semiconductor device having a gallium and nitrogen containing ba

1997-12-18

2000-02-22

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

H01L 213205

Patent

active

060279923

ABSTRACT:
The present invention relates to a process of forming a semiconductor device including forming a gallium and nitrogen bearing layer and forming at least one gate electrode over the gallium and nitrogen bearing barrier layer. The invention also includes a semiconductor device formed according to this process. In another embodiment, the invention includes a semiconductor device including a substrate, a gallium and nitrogen containing barrier layer disposed over the substrate, and at least one gate electrode disposed over the gallium and nitrogen bearing barrier layer.

REFERENCES:
patent: 4985742 (1991-01-01), Pankove
patent: 5502005 (1996-03-01), Mikagi
patent: 5612574 (1997-03-01), Summerfelt et al.
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 5726087 (1998-03-01), Tseng et al.
M. Bhat et al., MOS Characteristics of Ultrathin NO-Grown Oxynitrides, IEEE, pp. 421-423, 1994.

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