Semiconductor device having a fuse layer

Details Semiconductor device having a fuse layer Semiconductor device having a fuse layer

1996-06-28

1999-02-16

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257208, 257209, 257630, H01L 2710, H01L 2900

Patent

active

058723897

ABSTRACT:
Burst pressure P of an insulating layer positioned immediately on a fuse layer is defined by using planar width W of fuse layer and thickness t of insulating layer. The value of the planar width W of fuse layer and the value of the thickness t of insulating layer are set such that the value of burst pressure P is at most about 1000 kg/cm.sup.2. The value of the thickness t and the value of the planar width W are set such that the value t/W is at least 0.45 and at most 0.91. Consequently, stable fuse blowing becomes possible while reducing manufacturing cost.

REFERENCES:
patent: 4853758 (1989-08-01), Fischer
patent: 5241212 (1993-08-01), Motonami et al.
patent: 5321300 (1994-06-01), Usuda et al.
patent: 5331195 (1994-07-01), Yukihiro
patent: 5444012 (1995-08-01), Yoshizumi et al.
patent: 5578861 (1996-11-01), Kinoshita et al.

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