Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2006-09-12
2006-09-12
Lee, Eddie C. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S529000, C257S209000, C257S665000, C257S048000, C257S530000, C257S737000, C257S786000, C365S200000, C365S230030, C324S517000, C324S527000
Reexamination Certificate
active
07105917
ABSTRACT:
A semiconductor device and a fabrication method thereof are provided. The semiconductor device has a probing pad formed on a chip. The probing pad is connected to an output pad and an internal circuit though a fuse. After an electrical testing of the chip by the probing pad, the fuse is cut by a laser beam. Therefore, the probing pad is disconnected from the output pad and the internal circuit. The output pad is connected to an output lead of a package, which is encapsulating the chip. According to the device and the fabrication methods thereof, performance of the device can be enhanced by a low parasitic capacitance and a low parasitic resistance.
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Cho Kang-Sik
Kim Gyu-Chul
Park Chul-Sung
Im Junghwa
Lee Eddie C.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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