Semiconductor device having a floating node that can maintain a

Details Semiconductor device having a floating node that can maintain a Semiconductor device having a floating node that can maintain a

1996-10-16

1999-04-13

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438253, 438454, H01L 2184

Patent

active

058937285

ABSTRACT:
In a dynamic random access memory device including an SOI substrate and a field shield isolation region, a p type impurity region is formed between an n type source/drain region of a transistor coupled to a storage node in a dynamic memory cell and an n type impurity region below a field shield electrode A reverse bias voltage is supplied respectively between the p and n type impurity regions, and between the n type source/drain region of the transistor and the p type body region. As a result, leakage current from the n type source/drain region to the p type body region is compensated for by the leakage current from the n type impurity region to the p type impurity region

REFERENCES:
patent: 5296402 (1994-03-01), Ryou
patent: 5355012 (1994-10-01), Yamaguchi et al.
patent: 5440161 (1995-08-01), Iwamatsu et al.
patent: 5508219 (1996-04-01), Bronner et al.
patent: 5525531 (1996-06-01), Bronner et al.
patent: 5585284 (1996-12-01), Park
patent: 5631186 (1997-05-01), Park et al.

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