Semiconductor device having a ferroelectric memory element with

Details Semiconductor device having a ferroelectric memory element with Semiconductor device having a ferroelectric memory element with

1995-10-03

1998-04-28

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, H01L 2576, H01L 2994, H01L 31119, H01L 3162, H01L 31113

Patent

active

057448329

ABSTRACT:
A semiconductor device includes a semiconductor body (3) with a semiconductor element (1) with an electrically conducting region (5) on which a capacitor (2) forming a memory element is present with a lower electrode (11), an oxidic ferroelectric dielectric (12), and an upper electrode (13), which lower electrode (11) makes electrical contact with the conducting region (5) and includes a layer with a conductive metal oxide (112) and a layer (111) including platinum. The layer with the conductive metal oxide (112) acts as an oxygen barrier during manufacture. The invention also relates to a method of manufacturing such a semiconductor device. The device is characterized in that the layer including platinum (111) contains more than 15 atom % of a metal capable of forming a conductive metal oxide, and in that the layer (112) with the conductive metal oxide is present between the layer (111) comprising platinum and the ferroelectric dielectric (12). A good electrical contact between the lower electrode (11) and the conducting region (5) after manufacture is achieved thereby.

REFERENCES:
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patent: 5300799 (1994-04-01), Nakamura et al.
patent: 5313089 (1994-05-01), Jones, Jr.
patent: 5382817 (1995-01-01), Kashihara et al.
patent: 5555486 (1996-09-01), Kingon et al.
"VLSI Technology", by S.M. Sze, McGraw-Hill Book Company (Background reference text--copy not provided).
"Silicon Processing for the VLSI Era", by S. Wolf., vol. 1, 2 Lattice Press (Background reference text--copy not provided)

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