Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2005-11-15
2005-11-15
Lee, Hsien Ming (Department: 2823)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S240000, C438S253000, C438S381000
Reexamination Certificate
active
06964873
ABSTRACT:
A method of fabricating a semiconductor device having a ferroelectric capacitor includes the steps of forming a lower electrode layer of the ferroelectric capacitor on an insulation film covering an active device element, forming a ferroelectric film on the lower electrode layer as a capacitor insulation film, crystallizing the ferroelectric film by applying a thermal annealing process in an atmosphere containing a non-oxidizing gas and an oxidizing gas, and forming an upper electrode layer on the ferroelectric film.
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European Patent Office Search Report for EPO Application No. 00122735.4-2203 to Fujitsu Limited, Feb. 28, 2001.
Chu Fan
Eastep Brian
Fox Glen R.
Horii Yoshimasa
Matsuura Katsuyoshi
Hogan & Hartson LLP
Kubida William J.
Lee Hsien Ming
Meza Peter J.
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