Semiconductor device having a dual gate electrode and...

Details Semiconductor device having a dual gate electrode and... Semiconductor device having a dual gate electrode and...

2008-05-16

2011-12-13

Li, Meiya (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S351000, C257S412000, C257SE21623, C257SE21637, C257SE21027, C257SE21177, C257SE21179, C257SE21421, C257SE21632, C257SE21635, C257SE21674, C438S157000, C438S176000, C438S195000, C438S197000, C438S283000, C438S652000, C438S657000

Reexamination Certificate

active

08076729

ABSTRACT:
Disclosed is a method for forming a dual gate electrode of a semiconductor device, which may improve manufacturing productivity by simplifying a process of forming gate electrodes in PMOS and NMOS regions, respectively, and may provide improvement in performance by making the two gate electrodes have a different thickness and material state in a manner that one of the two gate electrodes has a single-layer structure and the other one has a two-layer structure.

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