Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-16
2011-12-13
Li, Meiya (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S351000, C257S412000, C257SE21623, C257SE21637, C257SE21027, C257SE21177, C257SE21179, C257SE21421, C257SE21632, C257SE21635, C257SE21674, C438S157000, C438S176000, C438S195000, C438S197000, C438S283000, C438S652000, C438S657000
Reexamination Certificate
active
08076729
ABSTRACT:
Disclosed is a method for forming a dual gate electrode of a semiconductor device, which may improve manufacturing productivity by simplifying a process of forming gate electrodes in PMOS and NMOS regions, respectively, and may provide improvement in performance by making the two gate electrodes have a different thickness and material state in a manner that one of the two gate electrodes has a single-layer structure and the other one has a two-layer structure.
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Dongbu Hitek Co., Ltd
Li Meiya
Workman Nydegger
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