Semiconductor device having a Damascene gate or a replacing...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...

Reexamination Certificate

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C257S506000, C257S510000, C257S513000

Reexamination Certificate

active

07071529

ABSTRACT:
A semiconductor device includes semiconductor elements and at least one dummy pattern. Each or at least some of the semiconductor elements has a Damascene gate structure or a replacing gate structure and is located in element-forming regions. In addition, at least a dummy pattern is located in a region different from the element-forming regions. The dummy pattern may have a semiconductor element structure of the same or different kind from the Damascene gate structure or replacing gate structure. The dummy pattern may be a pattern of an insulating film, an interface transistor, or an analog circuit capacitor electrode instead of the dummy gate.

REFERENCES:
patent: 6351019 (2002-02-01), DeBrosse et al.
patent: 6433438 (2002-08-01), Koubuchi et al.
patent: 2002/0043683 (2002-04-01), Nakagawa et al.
patent: 2001-102443 (2001-04-01), None
A. Yagishita, et al., “High Performance Metal Gate MOSFETs Fabricated by CMP for 0.1 μm Regime”, Proceedings of IEDM Tech. Dig. (1998), pp. 785-788.
A. Chatterjee, et al., “Sub-100nm Gate Length Metal Gate NMOS Transistors Fabricated by a Replacement Gate Process”, Proceedings of IEDM Tech. Dig. (1997), pp. 821-824.

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