Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified filler material
Patent
1995-11-21
1999-05-25
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified filler material
257787, 257788, 257789, 257790, 257791, 257792, 257793, 257794, 438 15, 438 51, 438 64, H01L 2329
Patent
active
059071907
ABSTRACT:
A semiconductor device in which the surface of the semiconductor element is coated with a cured silicone in which there is dispersed filler having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95 characterized in that the concentration of said filler is higher in the layer of said cured material remote from the element than in the layer of said cured material adjoining the element. The method for fabricating such a device comprises coating the surface of a semiconductor element with a curable silicone composition in which there is dispersed a filler having an average particle diameter of 0.01 to 500 micrometers and a specific gravity of 0.01 to 0.95 and thereafter curing said composition after the elapse of sufficient time for the filler in the layer of the composition adjoining the element to migrate into the layer of said composition remote from the element.
REFERENCES:
patent: 5391924 (1995-02-01), Uchida et al.
patent: 5571851 (1996-11-01), Freeman et al.
patent: 5641997 (1997-06-01), Ohta et al.
patent: 5683806 (1997-11-01), Sakumoto et al.
Ishikawa Takae
Mine Katsutoshi
Naito Hiroyosi
Yamakawa Kimio
Abraham Fetsum
Dow Corning Toray Silicone Co. Ltd.
Gobrogge Roger E.
Severance Sharon K.
Thomas Tom
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