Semiconductor device having a corrosion-resistant metal wiring l

Details Semiconductor device having a corrosion-resistant metal wiring l Semiconductor device having a corrosion-resistant metal wiring l

1992-09-21

1996-07-09

Sikes, William L.

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

H01L 2702

Patent

active

055347282

ABSTRACT:
A semiconductor device includes a metal wiring layer having a plurality of parallel, actual metal lines, with an endmost one of the actual metal lines being disposed adjacent a wiring-free region. The actual metal lines are electrically connected to an active circuit portion of the semiconductor device. At least one dummy metal line is interposed between the endmost one of the actual metal lines and the wiring-free region, with the at least one dummy metal line being disconnected from the active circuit portion. The dummy metal line(s) serve to prevent corrosion of the actual metal lines when the metal wiring layer is patterned by an etching process.

REFERENCES:
patent: 4489365 (1984-12-01), Daberoke
patent: 5028987 (1991-07-01), Eguchie
patent: 5032890 (1991-07-01), Ushiku et al.

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