Semiconductor device having a contact hole

Details Semiconductor device having a contact hole Semiconductor device having a contact hole

1996-10-02

1998-10-27

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257758, H01L 100

Patent

active

058280960

ABSTRACT:
A semiconductor device appropriate for increased integrity in which occurrence of electrical short-circuit between a conductor for connecting a bit line and a semiconductor substrate and a gate electrode is obtained. In this semiconductor device, a first insulation layer, a second insulation layer, and a third insulation layer are formed between a first interconnection layer on the semiconductor substrate and a second interconnection layer. The etching rates of the first insulation layer and the second insulation layer are lower than the etching rate of the third insulation layer.

REFERENCES:
patent: 4905064 (1990-02-01), Yabu et al.
patent: 5378652 (1995-01-01), Samata et al.
patent: 5396092 (1995-03-01), Peek
patent: 5488246 (1996-01-01), Hayashide et al.
patent: 5608248 (1997-03-01), Ohno
J.L. Vossen, W. Kern: Thin Film Processes, Academic Press, New York, San Franciso, London, 1978, pp. 417-424.
S. Wolf, R.N. Tauber: Silicon Processing for the VLSI Era, California, 1986, p. 534.

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