Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-12-21
1996-05-28
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257360, 257362, 361 56, H01L 2362, H02H 900
Patent
active
055214150
ABSTRACT:
A semiconductor device is disclosed which has an input terminal, an input protective device, a first stage circuit connected between the input terminal and an internal circuit, and a ground line system including a plurality of ground lines divided for noise suppression. Ground nodes of the protective circuit and the first stage circuit are connected with each other and to a common first ground line, while the ground nodes of the internal circuit are connected to second and third ground lines. The parasitic resistance formed between the ground nodes for the protective device and for the first stage circuit is reduced, thereby providing a surge voltage not higher than a clamp voltage of the protective device to protect the first stage circuit against electrostatic discharge-induced failure.
REFERENCES:
patent: 4342045 (1982-07-01), Kim
patent: 4811155 (1989-02-01), Kuriyama et al.
patent: 4987465 (1991-01-01), Longcor et al.
"Latent Effects Due to ESD in CMOS Integrated Circuits: Review and Experiments"; Greason et al; IEEE Transactions on Industry Applications: Jan./Feb. 1993; Nov. 1.
Loke Steven H.
NEC Corporation
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