Semiconductor device having a capacitor electrode formed of irid

Details Semiconductor device having a capacitor electrode formed of irid Semiconductor device having a capacitor electrode formed of irid

1996-12-20

2000-01-18

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257310, 257311, 257535, H01L 27108, H01L 2976, H01L 2994, H01L 31119

Patent

active

060159898

ABSTRACT:
A semiconductor device includes a semiconductor substrate having a major surface; a first interlayer insulating film formed on the semiconductor substrate and having an opening defined therein so as to open at the major surface of the semiconductor substrate; a connecting member made of Si as a principal component and embedded in the opening; a lower capacitor electrode connected electrically with the major surface of the semiconductor substrate through the connecting member; a capacitor dielectric film formed on the lower capacitor electrode; an upper capacitor electrode formed on the capacitor dielectric film; and a second interlayer insulating film formed on the capacitor upper electrode. The lower capacitor electrode referred to above is made of a principal component selected from the group consisting of ruthenium and iridium and contains oxygen in a quantity of 0.001 to 0.1% by atom and/or at least one impurity element in a quantity of 0.1 to 5% by atom. The impurity element is selected from the group consisting of titanium, chrome, tungsten, cobalt, palladium and molybdenum.

REFERENCES:
patent: 4851895 (1989-07-01), Green et al.
patent: 4982309 (1991-01-01), Shepherd
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5210043 (1993-05-01), Hosaka
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5609927 (1997-03-01), Summerfelt et al.
patent: 5612574 (1997-03-01), Summerfelt et al.

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