Semiconductor device having a capacitor dielectric film of multi

Details Semiconductor device having a capacitor dielectric film of multi Semiconductor device having a capacitor dielectric film of multi

1991-10-17

1993-12-28

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

365185, 257 68, 257 71, H01L 2710, H01L 2704, G11C 1134

Patent

active

052745864

ABSTRACT:
A MOS type semiconductor memory device and a method of controlling the same device that can improve the lifetime (reliability) of a capacitor dielectric film is disclosed. In accordance with the MOS type semiconductor memory device, the cell plate (upper electrode 9) voltage V.sub.GG of the capacitor is set to be greater than zero and less than an arithmetic average of the maximum logic voltage V.sub.H and the minimum logic voltage V.sub.L applied to the storage node. The lifetime of the capacitor dielectric film is improved in comparison with a cell plate voltage of V.sub.H /2 when an ON (Oxidized Nitride) film is used as a capacitor dielectric film.

REFERENCES:
patent: 4240092 (1980-12-01), Kuo
patent: 4423490 (1983-12-01), Roesner
patent: 4542481 (1985-09-01), Lange
patent: 4638460 (1987-01-01), Matsumoto
patent: 4922312 (1990-05-01), Coleman et al.
Howard, "Dual dielectric capacitor", IBM TDB, vol. 23, No. 3, Aug. 1980, p. 1058.
IEEE Transactions on Electron Devices, vol., No. 9, Sep., 1990 entitled "Promising Storage Capacitor Structure with Thin Ta.sub.2 O.sub.5 Film for Low-Power High-Density DRAMS's", by Shinriki et al.
"Introduction to MOS LSI Design", Mavor et al., Addison-Wesley Publishing Company, pp. 133-165, 1983.

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