Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2006-05-23
2006-05-23
Parker, Kenneth (Department: 2815)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S243000, C438S253000, C438S386000, C257S303000, C257S304000, C257S311000
Reexamination Certificate
active
07049203
ABSTRACT:
A semiconductor device comprises a semiconductor substrate and an interlayer insulating layer formed on the semiconductor substrate. The interlayer insulating layer preferably has a contact pad formed therein. A capacitor lower electrode is electrically connected to the contact pad. The capacitor lower electrode further comprises a pad-shaped storage node electrically connected to the contact pad; and a cup-shaped storage node arranged on the pad-shaped storage node. In this manner, it is possible to increase capacitance while reducing not open contacts. Leaning of the storage nodes can also be significantly reduced.
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English language abstract of Korean Publication No. 2004-2221.
Chung Tae-Young
Lee Jae-Goo
Park Je-Min
Díaz José R.
Marger & Johnson & McCollom, P.C.
Parker Kenneth
Samsung Electronics Co,. Ltd.
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