Semiconductor device having a buried gate that can realize a...

Details Semiconductor device having a buried gate that can realize a... Semiconductor device having a buried gate that can realize a...

2011-08-23

2011-08-23

Nhu, David (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S391000, C257S401000, C257SE21006, C257SE21147, C257SE21247, C257SE21545, C257SE21548

Reexamination Certificate

active

08004048

ABSTRACT:
A semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage is presented. The semiconductor device includes a semiconductor substrate, a buried gate, and a barrier layer. The semiconductor substrate has a groove. The buried gate is formed in a lower portion of the groove and has a lower portion wider than an upper portion. The barrier layer is formed on sidewalls of the upper portion of the buried gate.

REFERENCES:
patent: 6476444 (2002-11-01), Min
patent: 2008/0157194 (2008-07-01), Lee et al.
patent: 2008/0203455 (2008-08-01), Jang et al.
patent: 2008/0296670 (2008-12-01), Lee et al.
patent: 1020080089095 (2008-10-01), None

Affiliated with

Also associated with

Rating

Semiconductor device having a buried gate that can realize a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having a buried gate that can realize a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a buried gate that can realize a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2698257