Semiconductor device having a booster circuit

Details Semiconductor device having a booster circuit Semiconductor device having a booster circuit

1995-12-07

1997-09-02

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Including level shift or pull-up circuit

36523006, G11C 700

Patent

active

056639112

ABSTRACT:
A first transistor is connected between an external power supply and an output node. To increase a voltage of the output node up to a boost voltage, the first transistor is first turned on in response to a first signal and then increases the voltage of the output node up to a voltage of the external power supply. A second transistor is connected between a booster circuit and the output node and turned on in response to a second signal after a lapse of a predetermined period of time after the first signal to increase the voltage of the output node up to the boost voltage. A third transistor is connected between the output node and ground and turned on in response to a third signal when the voltage of the output node is equal to a ground potential.

REFERENCES:
patent: 4896297 (1990-01-01), Miyatake et al.
Nakagome et al., "A 1.5V Circuit Technology for 64Mb DRAMs", 1990 Symposium on VLSI Circuits, pp. 17-18.

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