Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2005-01-18
2005-01-18
Thai, Luan (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S785000, C257S048000, C257S780000
Reexamination Certificate
active
06844631
ABSTRACT:
A bond pad (10) has a probe region (14) and a wire bond region (12) that are substantially non-overlapping. In one embodiment, the bond pad (10) is connected to a final metal layer pad (16) and extends over an interconnect region (24). The bond pad (10) is formed from aluminum and the final metal layer pad (16) is formed from copper. Separating the probe region (14) from the wire bond region (12) prevents the final metal layer pad (16) from being damaged by probe testing, allowing for more reliable wire bonds. In an application requiring very fine pitch between bond pads, the probe regions (14) and active regions (12) of a plurality of bond pads formed in a line may be staggered to increase the distance between the probe regions (14). In addition, forming the bond pads (10) over the interconnect region (24) reduces the size of the integrated circuit.
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Dinh Dieu Van
Harper Peter R.
Leal George R.
Metz Jeffrey W.
Tran Tu Anh
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Hill Daniel D.
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