Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-07-26
2005-07-26
Tran, Thien F (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S779000, C257S780000, C257S781000, C257S784000, C257S786000
Reexamination Certificate
active
06921979
ABSTRACT:
A bond pad (200) has a first wire bond region (202) and a second wire bond region (204). In one embodiment, the first wire bond region (202) extends over a passivation layer (18). In an alternate embodiment, a bond pad (300) has a probe region (302), a first wire bond region (304), and a second wire bond region (306). In one embodiment, the probe region (302) and the wire bond region (304) extend over a passivation layer (18). The bond pads may have any number of wire bond and probe regions and in any configuration. The ability for the bond pads to have multiple wire bond regions allows for multiple wire connections to a single bond pad, such as in multi-chip packages. The ability for the bond pads to extend over the passivation layer also allows for reduced integrated circuit die area.
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Downey Susan H.
Harper Peter R.
Hess Kevin
Leoni Michael V.
Tran Tu-Anh
Chiu Joanna G.
Freescale Semiconductor Inc.
Hill Susan C.
Tran Thien F
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