Semiconductor device guard ring

Details Semiconductor device guard ring Semiconductor device guard ring

2006-07-13

2009-12-08

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE23178

Reexamination Certificate

active

07629656

ABSTRACT:
A semiconductor device1includes a semiconductor substrate10, insulating interlayer group20(first insulating interlayer group), insulating interlayer group30(second insulating interlayer group), and seal ring40(guard ring). The insulating interlayer group20is formed on the semiconductor substrate10. The insulating interlayer group30is formed on the insulating interlayer group20. The insulating interlayer group30is formed by an insulating material having a lower dielectric constant than that of the insulating interlayer group20. The seal ring40is provided so as to surround the circuit forming regions D11and D12. The seal ring40penetrates through the interface between the insulating interlayer group20and the insulating interlayer group30and is provided apart from the semiconductor substrate10.

REFERENCES:
patent: 6525398 (2003-02-01), Kim et al.
patent: 2002/0125577 (2002-09-01), Komada
patent: 2004/0042285 (2004-03-01), Yoshizawa et al.
patent: 2005/0146014 (2005-07-01), Gutierrez
patent: 1388582 (2003-01-01), None
patent: 1519924 (2004-08-01), None
patent: 2004-297022 (2004-10-01), None
patent: 2004-311930 (2004-11-01), None
English translation of Chinese Official Action issued Feb. 29, 2008 in corresponding Chinese Appln No. 200610105753.4.

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