Semiconductor device formed on a single semiconductor...

Details Semiconductor device formed on a single semiconductor... Semiconductor device formed on a single semiconductor...

2005-07-26

2005-07-26

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S391000, C257S392000

Reexamination Certificate

active

06921944

ABSTRACT:
A semiconductor device has a first semiconductor element and a second semiconductor element formed on a semiconductor substrate. The second semiconductor element is operated with a first voltage. The first semiconductor element is operated with a second voltage that is higher than the first voltage. The pairs of impurity regions of the first and second semiconductor elements respectively have first impurity areas and second impurity areas. Each of the first impurity areas have a predetermined impurity concentration and a conductivity type opposite to a conductivity type of the semiconductor substrate. The second impurity areas extend toward their corresponding gates from the first impurity areas. The second impurity areas have a same conductivity type as the first impurity areas and an impurity concentration lower than the concentration of the first impurity area.

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