Semiconductor device formed on a highly doped N+ substrate

Details Semiconductor device formed on a highly doped N+ substrate Semiconductor device formed on a highly doped N+ substrate

1996-05-31

1998-04-28

Garrett, Felisa

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Fluid growth from liquid combined with subsequent diverse...

257183, 257194, 438542, 438933, H01L 21225

Patent

active

057443963

ABSTRACT:
A method for fabricating semiconductor substrates with resistivity below 0.02 ohm-cm is provided. This low resistivity is achieved by doping a silicon melt with a phosphorus concentrations above 1.times.10.sup.18. The silicon melt is also doped with a germanium concentration that is 1.5 to 2.5 times that of the phosphorus concentration and a stress and dislocation free crystalline boule is grown. Phosphorus in high concentrations will induce stress in the crystal lattice due to the difference in the atomic radius of silicon atoms versus phosphorus atoms. Germanium compensates for the atomic radius mismatch and also retards the diffusion of the phosphorus as the diffusion coefficient remains relatively constant with a doping of 1.times.10.sup.18 to 1.times.10.sup.21 atoms per cm.sup.3. This will retard phosphorus from diffusing into an overlying epitaxial layer and retard other layers formed on the substrate from being auto-doped.

REFERENCES:
patent: 4849033 (1989-07-01), Sande et al.
patent: 5516724 (1996-05-01), Ast et al.

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