Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-09-04
2008-09-02
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S401000, C257SE27112
Reexamination Certificate
active
07420249
ABSTRACT:
A semiconductor device including a first semiconductor layer formed on a semiconductor substrate, a second semiconductor layer surrounding the first semiconductor layer, the second semiconductor layer being formed on the semiconductor substrate with one of an insulating film and a cavity, and a third semiconductor layer surrounding the second semiconductor layer, the third semiconductor layer being formed on the semiconductor substrate.
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Mizushima Ichiro
Nagano Hajime
Nitta Shinichi
Sato Tsutomu
Udo Yuso
Kabushiki Kaisha Toshiba
Ngo Ngan
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