Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package
Reexamination Certificate
2005-10-13
2008-10-28
Mai, Anh D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
C257S684000, C257S704000, C257S730000, C257S787000
Reexamination Certificate
active
07443016
ABSTRACT:
A semiconductor device and a fabrication method thereof are provided. An opening having at least one slanted side is formed on a substrate. At least one chip and at least one passive component are mounted on the substrate. An encapsulant having a cutaway corner is formed on the substrate to encapsulate the chip and the passive component, wherein the cutaway corner of the encapsulant is spaced apart from the slanted side of the opening by a predetermined distance. A singulation process is performed to cut the encapsulant to form a package with a chamfer. The package is embedded in a lid to form the semiconductor device, wherein a portion of the substrate located between the slanted side of the opening and the cutaway corner of the encapsulant is exposed from the encapsulant to form an exposed portion. The present invention also provides a carrier for the semiconductor device.
REFERENCES:
patent: 6040622 (2000-03-01), Wallace
patent: 6770961 (2004-08-01), Lee
patent: 2003/0034552 (2003-02-01), Wada et al.
patent: 2003/0137042 (2003-07-01), Mess et al.
patent: 2004/0169265 (2004-09-01), Bolken
patent: 2004/0259291 (2004-12-01), Takiar
Chen Chien-Chih
Huang Chien-Ping
Tsai Yu-Chieh
Tsai Yun-Lung
Garrity Diana C
Mai Anh D.
Silicon Precision Industries Co., Ltd.
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