Active solid-state devices (e.g. – transistors – solid-state diode – With shielding
Reexamination Certificate
2005-10-18
2005-10-18
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With shielding
C257S661000, C257S660000
Reexamination Certificate
active
06956281
ABSTRACT:
A semiconductor device that has a common border between P and N wells is susceptible to photovoltaic current that is believed to be primarily generated from photons that strike this common border. Photons that strike the border are believed to create electron/hole pairs that separate when created at the PN junction of the border. The photovoltaic current can have a sufficient current density to be destructive to the metal connections to a well if the area of these metal connections to the well is small relative to the length of the border. This photovoltaic current can be reduced below destructive levels by covering the common border sufficiently to reduce the number of photons hitting the common border. The surface area of the connections can also be increased to alleviate the problem.
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Smith, Brad et al.; “Poly Shield To Prevent Dendritic Growth”; Freescale Prior Art Database; Jan. 7, 2002; 3 pgs; Freescale, USA.
Smith Bradley P.
Travis Edward O.
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Ha Nathan W.
Pham Long
Vo Kim-Marie
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