Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-21
2007-08-21
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S324000, C257S325000, C257S326000, C257S343000, C257S383000, C257S384000, C257S385000, C257S401000, C257S522000, C257S637000, C257S638000, C257S752000, C257S902000
Reexamination Certificate
active
11068807
ABSTRACT:
A semiconductor device includes: a gate electrode formed on a substrate; impurity regions formed in the substrate and to both sides of the gate electrode; a first interlayer insulating film formed to cover the gate electrode; and a second interlayer insulating film formed so as to be aligned in a direction parallel to the principal surface of the substrate and adjacent to the gate electrode with a part of the first interlayer insulating film interposed therebetween. The second interlayer insulating film has a lower relative permeability than the first interlayer insulating film.
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Matsushita Electric Industrisl Co., Ltd.
Soward Ida M.
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