Semiconductor device for reducing interference between...

Details Semiconductor device for reducing interference between... Semiconductor device for reducing interference between...

2008-02-19

2010-06-15

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S224000, C257S296000

Reexamination Certificate

active

07737492

ABSTRACT:
A semiconductor device includes a semiconductor substrate having an active region having a plurality of recessed channel areas extending across the active region and a plurality of junction areas also extending across the active region. Gates are formed in and over the recessed channel areas of the active region. A device isolation structure is formed in the semiconductor substrate to delimit the active region, and the device isolation structure has recessed portions, each of which is formed near a junction area of the active region. Landing plugs are formed over each junction area in the active region and extend to fill the recessed portion of the device isolation structure outside the active region. The semiconductor device suppresses interference caused by an adjoining gate leading to a decrease in leakage current from a cell transistor.

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