Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For high frequency device
Reexamination Certificate
2006-07-18
2010-02-09
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For high frequency device
C257S777000, C257S686000, C257S787000, C257S790000, C257SE21581
Reexamination Certificate
active
07659618
ABSTRACT:
A semiconductor device for radio frequencies of more than 10 GHz having a semiconductor chip is disclosed. In one embodiment, the semiconductor chip, on its active top side, having a radio-frequency region and a low-frequency region and/or a region which is supplied with DC voltage. In one embodiment, the low-frequency region and/or the region which is supplied with DC voltage of the semiconductor chip is directly embedded in a plastic housing composition, the plastic housing composition is arranged such that it is spaced apart from the radio-frequency region on the active top side of the semiconductor chip.
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Dangelmaier Jochen
Pressel Klaus
Theuss Horst
Arora Ajay K
Dicke, Billig & Czaja P.L.L.C.
Infineon - Technologies AG
Le Thao X
LandOfFree
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