Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-03-08
1996-05-07
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257362, 257363, 361 90, 361 91, 361 56, 327419, 327427, 327434, 327437, H01L 2362, H02H 900, H02H 320, H03K 1760
Patent
active
055148930
ABSTRACT:
A semiconductor device includes an input/output terminal, an internal circuit connected to the input/output terminal, a first terminal for providing a first electrical potential, and a second terminal for providing a second electrical potential which is lower than the first electrical potential, the device further including: a first n-channel MOS transistor having a drain connected to the input/output terminal, a source connected to the second terminal, and a gate to be electrically connected to the first terminal; and a first switching element for switching between an electrically conductive state and a non-conductive state between the drain and the gate of the first n-channel MOS transistor, the switching element forming the electrically conductive state between the drain and the gate of the first n-channel MOS transistor when 1) a surge voltage lower than the first electrical potential is applied to the input/output terminal, and 2) an electrical potential difference between the drain and the gate of the first n-channel MOS transistor exceeds a predetermined voltage lower than a breakdown voltage of the gate of the first n-channel MOS transistor. The formation of the electrically conductive state prevents the gate oxide of the first n-channel MOS transistor from being damaged.
REFERENCES:
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5021853 (1991-06-01), Mistry
patent: 5075577 (1991-12-01), Okitaka
patent: 5173755 (1992-12-01), Co et al.
patent: 5181092 (1993-01-01), Atsumi
patent: 5182220 (1993-01-01), Ker et al.
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1984, "A CMOS VLSI ESD Input protection Device, DIFIDW", by Lin et al., pp. 202-209.
Hori Atsushi
Kurimoto Kazumi
Miyanaga Isao
Odanaka Shinji
Loke Steven H.
Matsushita Electric - Industrial Co., Ltd.
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