Semiconductor device for power MOS transistor module

Details Semiconductor device for power MOS transistor module Semiconductor device for power MOS transistor module

2006-01-31

2006-01-31

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S328000, C257S329000, C257S331000, C257S501000, C257S506000

Reexamination Certificate

active

06992351

ABSTRACT:
A first transistor has a first main electrode region which is formed so that these are subdivided into a plurality of first isolated island region. A second transistor has its first main electrode region which are divided into a plurality of second isolated island regions in close proximity to the array of first island regions.

REFERENCES:
patent: 6424028 (2002-07-01), Dickinson
patent: 6653740 (2003-11-01), Kinzer et al.
patent: 6673680 (2004-01-01), Calafut
patent: 6821824 (2004-11-01), Minato et al.
patent: 6838722 (2005-01-01), Bhalla et al.

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