Semiconductor device for power MOS transistor module

Details Semiconductor device for power MOS transistor module Semiconductor device for power MOS transistor module

2005-09-06

2005-09-06

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000, C257S401000, C257S773000

Reexamination Certificate

active

06940128

ABSTRACT:
A first transistor has a first main electrode region which is formed so that these are subdivided into a plurality of first isolated island region. A second transistor has its first main electrode region which are divided into a plurality of second isolated island regions in close proximity to the array of first island regions.

REFERENCES:
patent: 4965710 (1990-10-01), Pelly et al.
patent: 6020612 (2000-02-01), Sawamura et al.
patent: 6424028 (2002-07-01), Dickinson
patent: 6489689 (2002-12-01), Nojiri
patent: 6653740 (2003-11-01), Kinzer et al.

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