Semiconductor device for overvoltage protection

Details Semiconductor device for overvoltage protection Semiconductor device for overvoltage protection

2007-10-09

2007-10-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

C257S487000, C257S490000, C257SE29014, C257SE29023

Reexamination Certificate

active

11361173

ABSTRACT:
In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across an upper surface of the N-type buried diffusion layer over a wide range to form a PN junction region for an overvoltage protection. A P-type diffusion region is formed so as to be connected to the P-type buried diffusion layer. A breakdown voltage of the PN junction region is lower than a breakdown voltage between a source and a drain. This structure makes it possible to prevent a concentration of a breakdown current and protect the semiconductor device from an overvoltage.

REFERENCES:
patent: 2004/0031987 (2004-02-01), Henninger et al.
patent: 10-506503 (1998-06-01), None

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