Semiconductor device for low-power applications and a method...

Details Semiconductor device for low-power applications and a method... Semiconductor device for low-power applications and a method...

2011-07-26

2011-07-26

Dang, Phuc (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S584000, C257S210000

Reexamination Certificate

active

07985673

ABSTRACT:
The invention relates to a semiconductor device manufactured in a process technology, the semiconductor device having at least one wire located in an interconnect layer of said semiconductor device, the at least one wire having a wire width (W) and a wire thickness (T), the wire width (W) being equal to a minimum feature size of the interconnect layer as defined by said process technology, wherein the minimum feature size is smaller than or equal to 0.32 μm, wherein the aspect ratio (AR) of the at least one wire is smaller than 1.5, the aspect ratio (AR) being defined as the wire thickness (T) divided by the wire width (W). The invention further discloses a method of manufacturing such a semiconductor device.

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Stamper, A.K. et al. “Advanced Wiring RC Delay Issues for sub-0.25-micron Generation CMOS,” IBM Microelectronics, Essex Junction, Vermont 05452, 1998.

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