Semiconductor device for improving the peak induced voltage...

Details Semiconductor device for improving the peak induced voltage... Semiconductor device for improving the peak induced voltage...

2009-02-15

2011-11-01

Sandvik, Benjamin (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S386000, C257S387000, C257S401000, C257S502000, C257SE29027, C257SE29028, C257SE29066, C257SE29067, C257SE29257, C257SE21382, C257SE21417, C257SE21418, C257SE21419, C257SE29260, C438S135000, C438S197000, C438S201000, C438S268000

Reexamination Certificate

active

08049273

ABSTRACT:
A power semiconductor device includes a backside metal layer, a substrate formed on the backside metal layer, a semiconductor layer formed on the substrate, and a frontside metal layer. The semiconductor layer includes a first trench structure including a gate oxide layer formed around a first trench with poly-Si implant, a second trench structure including a gate oxide layer formed around a second trench with poly-Si implant, a p-base region formed between the first trench structure and the second trench structure, a plurality of n+ source region formed on the p-base region and between the first trench structure and the second trench structure, a dielectric layer formed on the first trench structure, the second trench structure, and the plurality of n+ source region. The frontside metal layer is formed on the semiconductor layer and filling gaps formed between the plurality of n+ source region on the p-base region.

REFERENCES:
patent: 6777295 (2004-08-01), Lin
patent: 6806548 (2004-10-01), Shirai
patent: 6809349 (2004-10-01), Yamaguchi
patent: 7037788 (2006-05-01), Ito et al.
patent: 7253473 (2007-08-01), Nakamura
patent: 2004/0041207 (2004-03-01), Takano et al.
patent: 2010/0044792 (2010-02-01), Hebert

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