Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1995-08-30
1998-04-07
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257628, 257147, 257481, H01L 310312, H01L 2974, H01L 29861
Patent
active
057367531
ABSTRACT:
To provide a field-effect transistor having a large power conversion capacity and its fabrication method by decreasing the leakage current between the source and the drain of a semiconductor device made of hexagonal-system silicon carbide when the gate voltage of the semiconductor device is turned off and also decreasing the electrical resistance of the semiconductor device when the gate voltage of the semiconductor device is turned on. The main current path of the field-effect transistor is formed so that the current flowing between the source and the drain of, for example, a field-effect transistor flows in the direction parallel with the {0001} plane and a channel forming plane
REFERENCES:
patent: 5585648 (1996-12-01), Tischler
Inoue Yohsuke
Kawase Daisuke
Kozono Yuzo
Ohno Toshiyuki
Suzuki Takaya
Fahmy Wael
Hitachi , Ltd.
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