Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-03-25
2008-03-25
Gurley, Lynne (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S337000, C257S339000, C257SE29319
Reexamination Certificate
active
07348630
ABSTRACT:
The semiconductor device has a semiconductor substrate, gate electrodes formed above the semiconductor substrate, and a pair of impurity diffusion layers formed in a surface layer of the semiconductor substrate at both sides of each of the gate electrodes. The semiconductor device also has drift layers formed in the surface layer of the semiconductor substrate between the gate electrodes and one of the impurity diffusion layers as a same conduction type as the impurity diffusion layers. The gate electrodes are made of metal including aluminum, and each is formed in an overhang shape. The semiconductor device can provide an LDMOS transistor enhanced in maximum transmission frequency and power gain and capable of a high-frequency operation with high efficiency as a basic element of a high-frequency power amplifier.
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Nakamura Shunji
Yamauchi Tsunenori
Fujitsu Limited
Gebremariam Samuel A
Gurley Lynne
Westerman, Hattori, Daniels & Adrian , LLP.
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