Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-17
2005-05-17
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S122000, C257S173000, C257S355000
Reexamination Certificate
active
06894351
ABSTRACT:
The invention makes it possible to form thyristers and SCRs that show a good discharge efficiency upon application of static electricity in semiconductor devices using a SOI substrate. A semiconductor device is equipped with a connection terminal for connection with an external element, a dielectric substrate having a semiconductor layer formed therein, a first region of a first conductive type that is formed in the semiconductor layer and electrically connected to the connection terminal, a second region of a second conductive type that is formed in the semiconductor layer and electrically connected to the first region, a third region of the first conductive type that is formed adjacent to the second region in the semiconductor layer, and a fourth region of the second conductive type that is formed adjacent to the third region in the semiconductor layer.
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Okawa Kazuhiko
Saiki Takayuki
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