Semiconductor device for checking quality of a semiconductor reg

Details Semiconductor device for checking quality of a semiconductor reg Semiconductor device for checking quality of a semiconductor reg

1997-09-26

1998-11-03

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257354, 257376, 257398, 257399, H01L 2701

Patent

active

058313109

ABSTRACT:
A semiconductor device includes a flat, square n-type diffusion layer, a p-type channel stopper region, and an electrode. The n-type diffusion layer is formed to be isolated in a check element region of a p-type semiconductor substrate or a p-type well covered with a field oxide film and having circuit element regions and the check element region sandwiched therebetween. The p-type channel stopper region is formed to contact at least one side of the n-type diffusion layer. The electrode is extracted from the n-type diffusion layer through a contact hole. The n-type diffusion layer, the p-type channel stopper region, and the electrode constitute the check element for checking a state of the p-type channel stopper region by measuring a junction breakdown voltage of the n-type diffusion layer.

REFERENCES:
patent: 4013484 (1977-03-01), Boleky et al.
patent: 4459741 (1984-07-01), Schwabe et al.
patent: 4574467 (1986-03-01), Halfacre et al.
patent: 4697199 (1987-09-01), De Graaff et al.
patent: 5670816 (1997-09-01), Hatano et al.
Dockerty, Formation of Low Capacitance Diffusions, IBM Technical Disclosure Bulletin, vol. 24, No. 3, Aug. 1981.

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