Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-08-21
1999-12-07
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257773, 257776, H01L 2348, H01L 2352
Patent
active
05998872&
ABSTRACT:
A semiconductor device having a metal layer pattern which prevents cracks from forming in insulating spaces. The semiconductor device includes a plurality of metal layers stacked vertically and a plurality of insulating layers, interposed vertically between the plurality of metal layers. A metal wiring pattern is formed on each of the plurality of metal layers. The wiring patterns are separated by insulating spaces, and the insulating spaces in each of the plurality of metal layers are vertically shifted with regard to the neighboring one of the plurality of metal layers.
REFERENCES:
patent: 5760429 (1998-06-01), Yano et al.
Jeon Young Soo
Kim Han Seong
Kim Ho Sik
Seo Gi Ho
Samsung Electronics Co,. Ltd.
Thomas Tom
Vu Hung Kim
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