Semiconductor device fabrication using a sacrificial plug for de

Details Semiconductor device fabrication using a sacrificial plug for de Semiconductor device fabrication using a sacrificial plug for de

1997-12-18

2000-04-18

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438595, 438305, H01L 213205

Patent

active

060514876

ABSTRACT:
A semiconductor device is formed by forming a sacrificial plug over a substrate and forming active regions in the substrate adjacent the sacrificial plug. A film is then formed over portions of the substrate adjacent the sacrificial plug. The sacrificial plug is then selectively removed leaving an opening in the film, and a gate electrode is formed in the opening. The sacrificial plug can be formed from several materials including, for example, polysilicon and nitrogen-bearing species such as nitride. The gate electrode may, for example, be formed from temperature-sensitive metals such as copper since the gate electrode may be formed subsequent to high temperature steps of the fabrication, such as a source drain anneal, for example.

REFERENCES:
patent: 4521448 (1985-06-01), Sasaki
patent: 5316981 (1994-05-01), Gardner et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5393686 (1995-02-01), Yeh et al.
patent: 5548143 (1996-08-01), Lee
patent: 5576227 (1996-11-01), Hsu
patent: 5773348 (1998-06-01), Wu
patent: 5854102 (1998-12-01), Gonzalez et al.

Affiliated with

Also associated with

Rating

Semiconductor device fabrication using a sacrificial plug for de does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device fabrication using a sacrificial plug for de, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device fabrication using a sacrificial plug for de will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2335975