Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-01-22
2000-08-01
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257372, H01L 2976
Patent
active
060970685
ABSTRACT:
A semiconductor device and method of fabrication for such device in which a P- epitaxial layer is positioned above a P++ substrate. A P++ buried layer implant is positioned within the device between the P++ substrate and the P- epitaxial layer. A connecting p+ implant is placed within the epitaxial layer above the buried p+ blanket layer implant. In one exemplary embodiment, the device includes a shallow P-well with the P+ connecting implant in a position within the epitaxial layer connecting the shallow P-well and the buried P+ blanket implant layer.
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Brown Jeffrey Scott
Furkay Stephen Scott
Gauthier, Jr. Robert John
Tian Xiaowei
Tong Minh Ho
Henkler Richard A.
International Business Machines - Corporation
Prenty Mark V.
Shkurko Eugene I.
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