Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Recessed oxide by localized oxidation
Patent
1996-12-30
1999-04-20
Fourson, George R.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Recessed oxide by localized oxidation
438228, 438451, H01L 2176
Patent
active
058952586
ABSTRACT:
A semiconductor fabrication method for forming an insulation film and a first anti-oxidation film sequentially on a substrate which is sectioned into each of a peri region and a cell region. An active pattern is formed in the cell region and a first field ion-implanted region in a first conductive well of the cell region. Side wall spacers are formed on each side wall of the active pattern in the cell region. An active pattern is formed in the peri region by selectively etching the first anti-oxidation film and the insulation film so as to expose a certain surface portion of the peri region substrate therethrough. A first field ion-implanting region is formed in a first conductive well of the peri region by ion-implanting highly concentrated first conductive impurities through the exposed substrate and a second field ion-implanted region in a second conductive well of the peri region. Lastly, a field oxide layer created using a field oxidation process after removing the first anti-oxidation film, the insulation film and the side wall spacers. The method beings by forming a semiconductor device which eliminates double hump phenomenon, decreases leakage current and lowers stand-by current to improve the operating properties of the device.
REFERENCES:
IEEE Electron Device Letters, vol. 14, No. 8, Aug. 1991, pp. 412-414, "The Current-Carrying Corner Inherent . . . ".
IEEE Transactions on Electron Devices, vol. Ed.-32, No. 2, Feb. 1985, pp. 441-445, "Analysis of an Anomalous . . . ".
Fourson George R.
LG Semicon Co. Ltd.
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