Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-09-24
2000-05-30
Beck, Shrive
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 427123, 427282, 4273831, H01L 2144
Patent
active
060690658
ABSTRACT:
A semiconductor device fabrication method for simple and high-reliability electrode formation capable of increasing a bond strength with solder when performing wiring through soldering. To form an electrode on a semiconductor substrate having a junction, the pattern of an aluminum paste electrode having an opening is formed and thereafter, the pattern of a silver-aluminum paste electrode or silver paste electrode is formed on the opening so as to overlap with the pattern of the electrode. Thereby, it is possible to increase the bond strength with solder of the silver-aluminum paste electrode or silver paste electrode on the opening without being alloyed with the aluminum paste electrode. It is also possible to improve the certainty of the electrical connection between the electrodes because the overlap between the metallic paste patterns is alloyed.
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Arimoto Satoshi
Kawama Yoshitatsu
Beck Shrive
Chen Bret
Mitsubishi Denki & Kabushiki Kaisha
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