Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2007-10-02

2007-10-02

Alanko, Anita K (Department: 1765)

Etching a substrate: processes

Nongaseous phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C216S041000, C216S051000, C216S057000, C216S083000, C216S100000, C216S101000, C216S108000, C438S704000, C438S705000, C438S745000, C438S799000

Reexamination Certificate

active

11062632

ABSTRACT:
A semiconductor device fabrication method comprises (1) forming a patterned mask layer on an oxide layer of a Mn-containing perovskite type oxide; (2) heat-treating the oxide layer; and (3) patterning the oxide layer with an etching solution containing at least one of hydrochloric acid, sulfuric acid, and nitric acid after the heat treatment of the oxide layer.

REFERENCES:
patent: 6746910 (2004-06-01), Hsu et al.
patent: 6955992 (2005-10-01), Zhang et al.
patent: 2002/0139776 (2002-10-01), Tsuchiya et al.
patent: 2003-68983 (2003-03-01), None
patent: 2003-68984 (2003-03-01), None
patent: 2003-197877 (2003-07-01), None

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