Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2007-08-28

2007-08-28

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C257SE21160, C257SE21241, C438S798000

Reexamination Certificate

active

11259209

ABSTRACT:
The semiconductor device fabrication method comprises the step of forming a first porous insulation film38over a semiconductor substrate10;the step of forming a second insulation film40whose density is higher than that of the first porous insulation film38;and the step of applying electron beams, UV rays or plasmas with the second insulation film40present to the first porous insulation film38to cure the first porous insulation film38.The electron rays, etc. are applied to the first porous insulation film38through the denser second insulation film40,whereby the first porous insulation film38can be cured without being damaged. The first porous insulation film38can be kept from being damaged, whereby the moisture absorbency and density increase can be prevented, and resultantly the dielectric constant increase can be prevented. Thus, the present invention can provide a semiconductor device including an insulation film of low dielectric constant and high mechanical strength.

REFERENCES:
patent: 6165890 (2000-12-01), Kohl et al.
patent: 2006/0081830 (2006-04-01), Knorr et al.
patent: 2002-26121 (2002-01-01), None
patent: 2003-68850 (2003-03-01), None
patent: 2002-75412 (2002-10-01), None
Korean Office Action dated Oct. 31, 2006 (mailing date), issued in corresponding Korean Patent Application No. 10-2005-0115729.

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