Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2007-02-13

2007-02-13

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21176

Reexamination Certificate

active

10936705

ABSTRACT:
The semiconductor device fabrication method comprises the step of forming a conducting film22by CVD, so as to cover a first surface and a second surface of a silicon substrate10; the step of removing the conducting film22at least in a first region of the first surface of the silicon substrate10; and the step of forming a gate insulation film28in the first region of the first surface of the silicon substrate10. The semiconductor fabricating device further comprises after the step of forming a conducting film22and before the step of forming a gate insulation film28the step of removing the conducting film22on the second surface of the silicon substrate10. In the step of forming a gate insulation film28, the gate insulation film28is formed with the silicon substrate10exposed over the second surface of the silicon substrate10. Agate insulation film28is formed on the first surface of a silicon substrate10with the silicon substrate or a silicon oxide film exposed over the second surface of the silicon substrate10, whereby intra-wafer plane dispersions of the film thickness of the gate insulation film can be made small. Thus, semiconductor devices having stable quality can be provided.

REFERENCES:
patent: 6200834 (2001-03-01), Bronner et al.
patent: 10-189565 (1998-07-01), None
patent: 2000-182979 (2000-06-01), None

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