Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2007-06-19

2007-06-19

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S703000

Reexamination Certificate

active

11366510

ABSTRACT:
The semiconductor device fabrication method comprises the step of forming a first insulation film48on a semiconductor substrate10and a ferroelectric capacitor42; the step of forming first interconnections56a–56c; the step of forming a second insulation film60; the step of planarizing the surface of the second insulation film60; the step of making heat treatment with a heat treatment furnace to remove water from the second insulation film60; the step of making heat treatment in a plasma atmosphere generated by using N2O gas or N2gas; the step of removing water from the second insulation film60and nitriding the surface of the second insulation film60; the step of forming a barrier film62on the second insulation film60; the step of forming contact holes68in the barrier film62and the second insulation film60; and the step of burying conductor plugs70in the contact holes68.

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