Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

1995-06-07

1997-07-22

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566621, 437225, 134 13, H01L 21311

Patent

active

056500416

ABSTRACT:
An MLR (multilayer resist) 3 is formed on a BPSG layer 2 on top of a silicon wafer 1, then dry etched using an etching gas 8 to form a contact hole 2a on the BPSG layer 2. Next, the polymer residues 9a and 9b adhering to the side walls of the contact hole 2a and the surface of the BPSG layer 2 are subjected to a cleaning treatment using a cleaning treating liquid that contains 0.04-0.12 wt % hydrogen fluoride, thereby removing the polymer residues 9a and 9b.
During etching the presence of the polymer residue layer 9 prevents etching in the horizontal direction, thereby allowing the formation of a highly precise contact hole 2a. In addition, because the treating liquid has the composition described above, the aforementioned polymer residues 9a and 9b are removed, thereby avoiding any degradation of the electrical characteristics. In addition, corrosion of the side walls of the contact hole due to the cleaning treating liquid is prevented, thereby maintaining the high level of contact hole precision. As a result good electrical characteristics are ensured even if the structure has an ultrafine-pitch pattern.

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Solid State Technology, vol. 37, No. 1, 1 Jan. 1994, pp. 61/62, 64/65 XP000441035, R. A. Bowling, et al., "MMST Wafer Cleaning".
Semiconductor Science & Technology, vol. 8, No. 10, 1 Oct. 1993, pp. 1897-1903, XP000417423, S. J. Pearton, et al., "Low Bias Dry Etching of Tungsten & Dielectric Layers on GaAs".
Journal of the Electrochemical Society, vol. 139, No. 6, 1 Jun. 1992, pp. 1751-1756, XP000324426, O. J. Anttila, et al., "Metal Contamination Removal on Silicon Wafers Using Dilute Acidic Solutions".

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