Semiconductor device fabrication method

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from liquid combined with preceding diverse...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S500000

Reexamination Certificate

active

07045446

ABSTRACT:
In a semiconductor device fabrication method using a fluidic self-assembly technique in which in a liquid, a plurality of semiconductor elements are mounted in a self-aligned manner on a substrate with a plurality of recessed portions formed therein, protruding potions that are inserted in the respective recessed portions of the substrate are formed in the lower portions of the respective semiconductor elements, the liquid in which the semiconductor elements have been spread is poured over the substrate intermittently, and the substrate is rotated in a period of time in which the liquid is not poured.

REFERENCES:
patent: 5258320 (1993-11-01), Zavracky et al.
patent: 5545291 (1996-08-01), Smith et al.
patent: 5783856 (1998-07-01), Smith et al.
patent: 5824186 (1998-10-01), Smith et al.
patent: 5904545 (1999-05-01), Smith et al.
patent: 6716773 (2004-04-01), Egami et al.
patent: 2003/0062599 (2003-04-01), Egami et al.
patent: 2004/0056268 (2004-03-01), Onozawa et al.
patent: 2004/0063233 (2004-04-01), Onozawa
patent: 2004/0140199 (2004-07-01), Mizohata et al.
patent: 11-144307 (1999-05-01), None
patent: 11-149652 (1999-06-01), None
patent: 11-186651 (1999-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device fabrication method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3570152

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.